symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17 25 55 60 r q jc 2.3 3 w t a =70c 1.3 power dissipation a t a =25c p dsm 2.1 repetitive avalanche energy l=0.3mh c 33 a mj junction and storage temperature range a p d c 50 25 -55 to 175 t c =100c avalanche current c 15 i d 25 20 80 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AOD484 30v n-channel mosfet features v ds (v) = 30v i d = 25 a (v gs = 10v) r ds(on) < 15 m w (v gs = 10v) r ds(on) < 23 m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AOD484 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, loa d switching and general purpose applications. g ds to252dpak top view bottom view g s d g s d alpha & omega semiconductor, ltd. www.aosmd.com
AOD484 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.5 2.5 v i d(on) 80 a 12.1 15 t j =125c 19 18.5 23 m w g fs 26 s v sd 0.71 1 v i s 21 a c iss 938 1220 pf c oss 142 pf c rss 99 pf r g 1.2 1.8 w q g (10v) 17.5 21 nc q g (4.5v) 8.4 nc q gs 3 nc q gd 4.1 nc t d(on) 5 ns t r 12 ns t d(off) 19 ns t f 6 ns t rr 19 21 ns q rr 10 12 nc 25 25 60 30 2.5 1.6 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge m w v gs =4.5v, i d =15a i s =1a, v gs =0v v ds =5v, i d =20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current is limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev5: aug. 2009 alpha & omega semiconductor, ltd. www.aosmd.com
AOD484 typical electrical and thermal characteristics 500 150 60 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) -40c 0 5 10 15 20 25 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =15a v gs =10v i d =20a 10 15 20 25 30 35 40 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 8v 10v 4.5v 6v 3.5v alpha & omega semiconductor, ltd. www.aosmd.com
AOD484 typical electrical and thermal characteristics 500 150 60 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c, t c =25c v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
AOD484 typical electrical and thermal characteristics 500 150 60 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 30 35 40 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t - = t a =150c 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD484 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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